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Journals / Sakarya University Journal of Science / 2026 / Volume: 22 Issue: 2

Effect of temperature on SiC grain size in hBN-SiC composites

hBN-SiC KOMPOZİTLERDE SICAKLIĞIN SiC TANE BOYUNUNA ETKİSİ

Zuhal Yılmaz(BİLECİK ŞEYH EDEBALİ ÜNİVERSİTESİ)
Nuran Ay(ANADOLU ÜNİVERSİTESİ)
Pages
—
Publication Date
2018-04-01
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

Because of this feature, it can be said that the growth of SiC grains is slowed down by hBN.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:In this study, the effect of temperature on the SiC grain size was investigated in the synthesis of hexagonal boron nitride-silicon carbide (hBN-SiC) composites.
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Key Findings & Data:Samples were sintered at 1700 o C, 1800 o C, 1900 o C and 2000 o C, under 50MPa pressure for 15 minutes by spark plasma sintering (SPS).
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Conclusion & Impact:Because of this feature, it can be said that the growth of SiC grains is slowed down by hBN.
🔬Design:Research Article
📍Scope:2000 Verileri
⚙️Variables:hBN · SiC · composite

Abstract

In this study, the effect of temperature on the SiC grain size was investigated in the synthesis of hexagonal boron nitride-silicon carbide (hBN-SiC) composites. Samples were sintered at 1700 o C, 1800 o C, 1900 o C and 2000 o C, under 50MPa pressure for 15 minutes by spark plasma sintering (SPS). In order to determine the effect of sintering temperature on the SiC grain size, grain sizes were measured by ImageJ program. Grain size distributions were determined by using normal distribution function. When the temperature was increased from 1700°C to 1900°C, the amount of h-BN increased by 0.9% and remained unchanged at 2000°C. When the temperature was increased from 1700°C to 2000°C, the average grain size of SiC increased from 1.9 μm to 1.96 μm. The standard deviation values ​​of grain size distribution increased from 0,445 at 1700°C to 0,812 at 2000°C. Depending on the temperature, the grain size distribution has increased. Due to the strong covalent bonds and plate-like structure of hBN, it has poor sinterability. Because of this feature, it can be said that the growth of SiC grains is slowed down by hBN.

Özet

Bu çalışmada hekzagonal bor nitrür- silisyum karbür (hBN-SiC) kompozit sentezinde sıcaklığın SiC tane boyutu üzerine etkisi araştırılmıştır. Numunelerin SPS ile 1700 o C, 1800 o C, 1900 o C ve 2000 o C’de farklı sıcaklıklarda 50MPa basınç altında 15dak sinterleme işlemi gerçekleştirilmiştir. Sinterleme sıcaklığının SiC tane boyutu üzerine etkisinin belirlenmesi için İmageJ programı ile tane boyut ölçümleri gerçekleştirilerek normal dağılım fonksiyonu ile tane boyut dağılımları tespit edilmiştir. 1700 o C’den 1900 o C’ye sıcaklık artırıldığında h-BN miktarında %0,9’luk bir artış gözlenmiştir ve 2000 o C’de ise değişmemiştir. SiC ortalama tane boyutu 1700 o C’den 2000 o C’ye sıcaklık artırıldığında 1,09µm’den 1,96µm’ye artmıştır. Tane boyut dağılımlarının standart sapma değerleri ise 1700 o C’de 0,445 iken 2000 o C’de 0,812 değerine arttığı gözlenmiştir. Sıcaklığa bağlı olarak tane boyut dağılımı artmaktadır. hBN fazının güçlü kovalent bağları ve plaka şeklinde yapıya sahip olmasından dolayı hBN’nin zayıf sinterlenebilitesi nedeniyle SiC tane büyümesini yavaşlattığı söylenebilir.

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Cite This Article

Yılmaz, Z., Ay, N. (2018). Effect of temperature on SiC grain size in hBN-SiC composites. Sakarya University Journal of Science, Volume: 22 Issue: 2. https://doi.org/10.16984/saufenbilder.348993

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