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Journals / International Journal of Pure and Applied Sciences / 2025 / Volume: 11 Issue: 2

Gate-Drain Distance Optimization in Multi-Layer AlGaN High Electron Mobility Transistors: A Finite Element Analysis

Çok Katmanlı AlGaN Yüksek Elektron Hareketliliği Transistörlerinde Kapı-Akaç Mesafesi Optimizasyonu: Sonlu Elemanlar Analizi

Yasin Doğan(KASTAMONU UNIVERSITY)0000-0002-3065-9864
Osman Çiçek(KASTAMONU ÜNİVERSİTESİ)0000-0002-2765-4165
Pages
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Publication Date
2025-12-29
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

This simulation approach enables effective device design optimi-zation without expensive experimental fabrication.

📌 3 Key Takeaways

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Objective & Hypothesis:High Electron Mobility Transistors (HEMTs) based on wide band gap semiconductors and two-dimensional electron gas (2-DEG) channels are crucial for high power and radio frequency applications.
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Key Findings & Data:This study investigates the effect of gate-drain distance (Lgd) on electronic characteristics of a multi-layer graded AlₓGa₁₋ₓN HEMT structure (x = 0.05-0.30) on Si substrate using finite element method simulation through SimuApsys modeling software.
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Conclusion & Impact:This simulation approach enables effective device design optimi-zation without expensive experimental fabrication.
🔬Design:Modeling & Simulation
📍Scope:Comprehensive Sample
⚙️Variables:SimuApsys · HEMTs · Finite Element Method

Abstract

High Electron Mobility Transistors (HEMTs) based on wide band gap semiconductors and two-dimensional electron gas (2-DEG) channels are crucial for high power and radio frequency applications. Gallium nitride (GaN)-based HEMTs offer superior breakdown voltage, electron transport characteristics, and thermal conductivity for next-generation power electronics. This study investigates the effect of gate-drain distance (Lgd) on electronic characteristics of a multi-layer graded AlₓGa₁₋ₓN HEMT structure (x = 0.05-0.30) on Si substrate using finite element method simulation through SimuApsys modeling software. The Lgd parameter was systematically varied between 0.8 μm and 30 μm to analyze breakdown voltage (Vbr), on-resistance (Ron), current-voltage char-acteristics, and electric field distribution. Simulation results reveal critical trade-offs: short Lgd (3-6 μm) provides low Ron and high current density (Ids,max ≈ 3.95 mA/mm) but lower Vbr (~135V) due to concentrated electric fields, while long Lgd (24-30 μm) achieves high Vbr (~380V) through distributed electric field profiles but with increased Ron and reduced current capacity (~0.65 mA/mm). Application-specific Lgd optimization guidelines are established: 3-6 μm for 350V. This simulation approach enables effective device design optimi-zation without expensive experimental fabrication.

Özet

Geniş bant aralığı yarı iletkenlere ve iki boyutlu elektron gazı (2-DEG) kanallarına dayanan Yüksek Elektron Hareketlilik Transistörleri (HEMT'ler), yüksek güç ve radyo frekansı uygulamaları için çok önemlidir. Galyum nitrür (GaN) tabanlı HEMT'ler, yeni nesil güç elektroniği için üstün kırılma gerilimi, elektron taşıma özellikleri ve termal iletkenlik sunar. Bu çalışma, SimuApsys modelleme yazılımı aracılığıyla sonlu ele-manlar yöntemi simülasyonu kullanarak Si substrat üzerinde çok katmanlı kademeli AlₓGa₁₋ₓN HEMT yapısının (x = 0.05-0.30) elektronik özellikleri üzerinde kapı-akaç mesafesinin (Lgd) etkisini araştırmaktadır. Lgd parametresi, kırılma voltajı (Vbr), direnç (Ron), akım-gerilim özellikleri ve elektrik alan dağılımını analiz etmek için 0,8 μm ile 30 μm arasında sistematik olarak değiştirilmiştir. Simülasyon sonuçları kritik ödünleşimleri ortaya koymaktadır: kısa Lgd (3-6 μm) düşük Ron ve yüksek akım yoğunluğu (Ids,max ≈ 3,95 mA/mm) sağlar, ancak yoğun elektrik alanları nedeniyle daha düşük Vbr (~135V) sağlarken, uzun Lgd (24-30 μm) dağıtılmış elektrik alanı profilleri sayesinde yüksek Vbr (~380V) sağlar, ancak Ron artar ve akım kapasitesi azalır (~0,65 mA/mm). Uygula-maya özel Lgd optimizasyon kılavuzları oluşturulmuştur: 350V için ≥30 μm. Bu simülasyon yaklaşımı, pahalı deneysel üretim olmadan etkili cihaz tasarımı optimizasyonu sağlar.

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Cite This Article

Doğan, Y., Çiçek, O. (2025). Gate-Drain Distance Optimization in Multi-Layer AlGaN High Electron Mobility Transistors: A Finite Element Analysis. International Journal of Pure and Applied Sciences, Volume: 11 Issue: 2. https://doi.org/10.29132/ijpas.1800457

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