Journals / Sigma Mühendislik ve Fen Bilimleri Dergisi / 2026 / Volume: 41 Issue: 1

Dielectrical parameters and relaxation of Al/NFT/p-Si schottky diode with frequency dependence

Emine Karagöz(Gazi University, Faculty of Arts and Sciences, Physics Department, Ankara,06560, Türkiye)0000-0001-5605-2932
Songül Fiat Varol(Manisa Celal Bayar University, Vocational School of Technical Sciences, Electric and Energy Department, Manisa,45140, Türkiye)0000-0001-7751-0103
Serkan Sayın(Giresun University, Faculty of Engineering, Environmental Engineering, Giresun, 28200, Türkiye)0000-0003-0518-3208
Ziya Merdan(Gazi University, Faculty of Arts and Sciences, Physics Department, Ankara,06560, Türkiye)0000-0001-8708-8583
Pages
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Publication Date
2023-03-14
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

Interestingly, the value of ε´ (≈3) even at 1 kHz shows that the prepared naphthalimide (with Thiophene property) nano-interlayer can provide more charges or energy storage ability and so it can be used instead of traditional interfacial layers.

📌 3 Key Takeaways

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Objective & Hypothesis:The fabricated Al/ Naphthalimide /p-Si Schottky diode’s dielectrical parameters and series resistance effect have been investigated by using the DC and AC measurements.
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Key Findings & Data:The dielectric parameters have increased with decreasing frequency.
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Conclusion & Impact:Interestingly, the value of ε´ (≈3) even at 1 kHz shows that the prepared naphthalimide (with Thiophene property) nano-interlayer can provide more charges or energy storage ability and so it can be used instead of traditional interfacial layers.
🔬Design:Image Presentation
📍Scope:Comprehensive Sample
⚙️Variables:Naphthalimide · Dielectrical Properties · Schottky Diode

Abstract

The fabricated Al/ Naphthalimide /p-Si Schottky diode’s dielectrical parameters and series resistance effect have been investigated by using the DC and AC measurements. W e have developed a facile interface structure that consisted of double-layer films in order to investigate the capacitance volume and series resistance effect through the device. The organic interlayer with little nanometer thickness between electrode and inorganic semiconductor drastically reduce the series resistance at the interface. The dielectric parameters have increased with decreasing frequency. Interestingly, the value of ε´ (≈3) even at 1 kHz shows that the prepared naphthalimide (with Thiophene property) nano-interlayer can provide more charges or energy storage ability and so it can be used instead of traditional interfacial layers.

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Cite This Article

Karagöz, E., Varol, S. F., Sayın, S., Merdan, Z. (2023). Dielectrical parameters and relaxation of Al/NFT/p-Si schottky diode with frequency dependence. Sigma Mühendislik ve Fen Bilimleri Dergisi, Volume: 41 Issue: 1. https://ajindex.com/articles/1344642

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