SavedAdd your journal

Journals / Dicle Üniversitesi Fen Bilimleri Enstitüsü Dergisi / 2013 / Cilt: 2 - Sayı: 1

The series resistance and the interface state density properties of a Cr/n–Si Schottky barrier diode prepared by pulsed DC sputtering

Atmalı DC saçtırma ile hazırlanan Cr/n-Si Schottky engel diyotunun seri direnç ve arayüzey durum yoğunluğu özellikleri

Ahmet TOMBAK
Yusuf Selim OCAK
Tahsin KILIÇOĞLU
Pages
9–15
Publication Date
2013-06-01
DOI
—
🏛️Bibliographic metadata and full text access for this article are provided via DergiPark.
DergiPark Record ↗
✨

AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

In addition, the capacitance–voltage C–V and the capacitance–frequency C–f characteristics of the diode were analyzed

📌 3 Key Takeaways

🎯
Objective & Hypothesis:A Cr/n–Si Schottky barrier diode was obtained by pulsed DC sputtering technique.
📊
Key Findings & Data:It was seen that the diode has an ideality factor of 1.07 and abarrier height of 0.60 eV.
💡
Conclusion & Impact:In addition, the capacitance–voltage C–V and the capacitance–frequency C–f characteristics of the diode were analyzed
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Pulsed DC sputtering · Schottky diode · Series resistance

Abstract

A Cr/n–Si Schottky barrier diode was obtained by pulsed DC sputtering technique. The electrical parametersof the diode such as ideality factor, barrier height and series resistance values were determined using thefunctions proposed by Cheung and Norde. It was seen that the diode has an ideality factor of 1.07 and abarrier height of 0.60 eV. The interface state density distribution of the diode was calculated using thecurrent–voltage I–V data. In addition, the capacitance–voltage C–V and the capacitance–frequency C–f characteristics of the diode were analyzed

Özet

Atmalı DC saçtırma yöntemi ile bir Cr/n–Si Schottky engel diyotu elde edildi. Diyota ait idealite faktörü,engel yüksekliği ve seri direnç gibi elektriksel parametreler Cheung ve Norde tarafından önerilen fonksiyonlarla belirlendi. Diyotun 1,07 idealite faktörü ve 0,60 eV engel yüksekliğine sahip olduğu görüldü.Diyotun arayüzey durum yoğunluk dağılımı akım–gerilim I–V verileri kullanılarak hesaplandı. Ayrıca,diyotun kapasite–gerilim C–V ve kapasite–frekans C–f özellikleri analiz edildi

🔖

Cite This Article

TOMBAK, A., OCAK, Y. S., KILIÇOĞLU, T. (2013). The series resistance and the interface state density properties of a Cr/n–Si Schottky barrier diode prepared by pulsed DC sputtering. Dicle Üniversitesi Fen Bilimleri Enstitüsü Dergisi, Cilt: 2 - Sayı: 1, 9–15. https://ajindex.com/articles/134360

📄 Full Text PDF Viewer

📄

PDF görüntüleyici hazırlanıyor...

References (28)

  1. A. Maestrini, B. Thomas, H. Wang, C. Jung, J. Treuttel, Y.Jin, G. Chattopadhyay, I. Mehdi, G. Beaudin, C. R. Physique 11 (2010) 480–495
  2. M.K. Hudait, K.P. Venkateswarlu, S.B. Krupanidhi, Solid State Electron 45 (2001) 133-141
  3. M. Soylu, F. Yakuphanoglu, Thin Solid Films 519 (2011) 1950–1954
  4. S. Asubay, O. Gullu, A. Turut, Vacuum 83 (2009) 1470–1474
  5. E.H. Rhoderick, R.H.Williams, Metal– Semiconductor Contacts, Oxford, Clerendon, 1988
  6. W. Mönch, J. Vac. Sci. Technol. B 17 (1999) 1867- 1876
  7. S. Chand, S. Bala, Phys B 390 (2007) 179-184
  8. C. Nuhoglu, Y. Gulen, Vacuum 84 (2010) 812–816
  9. S. Karatas, A. Turut, Physica B 381 (2006) 199–203
  10. S. Alt›ndal, I. Yucedag, A. Tataroglu, Vacuum 84 (2010) 363–368
  11. B. Sahin, H. Cetin, E. Ayyildiz, Solid State Commun. 135 (2005) 490–495
  12. O Pakma, N Serin, T Serin, S Alt›ndal, Semicond. Sci. Technol. 23 (2008) 105014-105022
  13. G. Guler, Ö. Gullu, Ö.F. Bakkaloglu, A. Turut, Physica B 403 (2008) 2211–2214
  14. Y.S. Ocak, M.F. Genisel, T. Kilicoglu, Microelectron. Eng. 87 (2010) 2338–2342
  15. B. Tatar, A.E. Bulgurcuo¤lu, P. Gökdemir, P. Aydogan, D. Y›lmazer, O. Özdemir, K. Kutlu, Int. J. Hydrogen Energy 34 (2009) 5208–5212
  16. W.T. Yen, Y.C. Lin, P.C. Yao, J.H. Ke, Y.L. Chen, Appl. Surf. Sci 256 (2010) 3432–3437
  17. Y.C. Lin, J.Y. Li, W.T. Yen, Appl. Surf. Sci. 254 (2008) 3262-3268
  18. S.K. Cheung, N.W. Cheung, Appl. Phys. Lett. 49 (1986) 85-87
  19. H. Norde, J. Appl. Phys. 50 (1979) 5052-5053
  20. O. Pakma, N.Serin, T.Serin, S. Alt›ndal, Physica B 406 (2011) 771–776
  21. H.C. Card, E.H. Rhoderick, J. Phys. D 4 (1971) 1589-1601
  22. M.K. Hudait, S.B. Kruppanidhi, Solid State Electron 44 (2000) 1089-1097
  23. E.H. Nicollian, J.R. Brews, MOS (Metal–Oxide– Semiconductor) Physics and Technology, Wiley, New York, 1982
  24. A. Turut, N. Yalcin, M. Saglam, Solid State Electron 35 (1992) 835
  25. S. Aydogan, U. Incekara, A.R. Deniz, A. Turut, Microelectronic Engineering 87 (2010) 2525-2530
  26. B. Akkal, Z. Benamara, B. Gruzza, L. Bideux, Vacuum 57 (2000) 219-228
  27. M.Okutan, E. Basaran, F. Yakuphanoglu, Appl. Surf. Sci. 252 (2005) 1966–1973
  28. S. Aydo¤an, U. Incekara, A. Turut, Thin Solid Films 518 (2010) 7156–7160.