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Journals / Uludağ Üniversitesi Mühendislik Fakültesi Dergisi / 2019 / Cilt: 24 Sayı: 3

EVALUATION OF THE RadFET RADIATION SENSOR PERFORMANCE IN 18 MV-EXTERNAL BEAM

18 MV-Harici Demet ile RadFET Radyasyon Sensörü Performansının Değerlendirilmesi

Berk Morkoç(ULUDAĞ ÜNİVERSİTESİ, FEN BİLİMLERİ ENSTİTÜSÜ)
Ayşegül Kahraman(ULUDAĞ ÜNİVERSİTESİ, FEN-EDEBİYAT FAKÜLTESİ)0000-0002-1836-7033
Dinçer Yeğen(Sağlık Bilimleri Üniversitesi Dr. A.Y. Ankara Onkoloji Eğitim ve Araştırma Hastanesi)0000-0003-3180-600X
Ercan Yılmaz(NÜKLEER RADYASYON DEDEKTÖRLERİ UYGULAMA VE ARAŞTIRMA MERKEZİ)0000-0002-6652-4662
Pages
309–318
Publication Date
2019-12-31
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

From the threshold voltages measured under zero gate voltage in a certain time interval, the percentage fading range was calculated as 0.004-1.235%.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:The radiation response of RadFET irradiated with 18 MV X-rays emitted from a linear accelerator was examined on threshold voltage shifts and trap densities.
📊
Key Findings & Data:The ΔVth – D graph showed excellent linearity of up to just about 2 Gy.
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Conclusion & Impact:From the threshold voltages measured under zero gate voltage in a certain time interval, the percentage fading range was calculated as 0.004-1.235%.
🔬Design:Araştırma Makalesi
📍Scope:Comprehensive Sample
⚙️Variables:RadFET · Radyasyon Cevabı · Radyoterapi

Abstract

The radiation response of RadFET irradiated with 18 MV X-rays emitted from a linear accelerator was examined on threshold voltage shifts and trap densities. The measured threshold voltages were compared before and after irradiation. Trap densities calculated using various techniques in the gate oxide and oxide/silicon interface were interpreted. The ΔVth – D graph showed excellent linearity of up to just about 2 Gy. The RadFETs response to radiation started to deviate from linearity after 2 Gy due to increasing oxide trapped charges induced by electric field screening. The experimental outcomes are in good accordance with the fitting function given for RadFETs. Fixed and switching traps formed by irradiation were investigated. The density of the fixed traps was significantly higher than the density of the switching traps. From the threshold voltages measured under zero gate voltage in a certain time interval, the percentage fading range was calculated as 0.004-1.235%.

Özet

Lineer hızlandırıcıdan yayılan 18 MV’luk X-ışınları ile ışınlanan RadFET’lerin radyasyon cevapları, eşik voltaj kaymaları ve tuzak yoğunlukları üzerinden incelenmiştir. Işınlamadan önce ve sonra eşik voltajları ölçülerek karşılaştırılmıştır. Çeşitli teknikler kullanılarak kapı oksitinde ve oksit/silikon arayüzeyinde hesaplanan tuzak yoğunlukları değerlendirilmiştir. ΔVth – D grafiği, yaklaşık 2 Gy’e kadar mükemmel doğrusallık göstermiştir. RadFET’in radyasyon cevabı, elektrik alan perdelemesi tarafından uyarılan oksit tuzak yüklerinin artmasıyla 2 Gy sonrasında doğrusallıktan sapmaya başlamıştır. Deneysel sonuçlar, RadFET’ler için verilen fit fonksiyonuyla iyi bir uyum içindedir. Işınlama sonucunda oluşan sabit ve anahtarlama tuzakları incelenmiştir. Sabit tuzakların yoğunluğu, anahtarlama tuzaklarının yoğunluğundan önemli bir miktar daha yüksek olarak bulunmuştur. Sıfır kapı voltajı altında ölçülen eşik voltajlarından yüzde zayıflama aralığı %0.004 – %1.235 olarak hesaplanmıştır.

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Cite This Article

Morkoç, B., Kahraman, A., Yeğen, D., Yılmaz, E. (2019). EVALUATION OF THE RadFET RADIATION SENSOR PERFORMANCE IN 18 MV-EXTERNAL BEAM. Uludağ Üniversitesi Mühendislik Fakültesi Dergisi, Cilt: 24 Sayı: 3, 309–318. https://doi.org/10.17482/uumfd.558166

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