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Journals / Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi / 2014 / Volume: 9 Issue: 2

Delta Tipi Engel Potansiyeli Olan Kane Tipi Yarıiletkenlerde Elektronların Etkin g-Çarpanı

Arif Babanlı
Deniz Türköz Altuğ
Pages
—
Publication Date
2014-12-31
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

It has been seen that the effective g-value of electron increases with increasing Ω, also oscillations have been observed the dependence on the equilibrium position

📌 3 Key Takeaways

🎯
Objective & Hypothesis:In this study, the effective g-factor of electrons has been calculated on Kane type semiconductors which have a delta-type potential barrier.
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Key Findings & Data:Applied uniform magnetic field directed along the axis-z.
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Conclusion & Impact:It has been seen that the effective g-value of electron increases with increasing Ω, also oscillations have been observed the dependence on the equilibrium position
🔬Design:Modeling & Simulation
📍Scope:Comprehensive Sample
⚙️Variables:Kane type semiconductors · g-factor

Abstract

In this study, the effective g-factor of electrons has been calculated on Kane type semiconductors which have a delta-type potential barrier. Applied uniform magnetic field directed along the axis-z. The energy spectrum of the electrons has been investigated into the Kane model. The electron g-factor calculated as a function of the strength of potential barrier and the centre of magnetic oscillations. It has been seen that the effective g-value of electron increases with increasing Ω, also oscillations have been observed the dependence on the equilibrium position

Özet

Özet: Bu çalışmada, delta tipi engel potansiyeline sahip olan Kane tipi yarıiletkenlerde elektronların etkin g-çarpanı hesaplanmıştır. Sabit dış magnetik alan z-ekseni doğrultusunda kabul edilerek, elektronların enerji spektrumları Kane modeline göre hesaplanmıştır. Etkin g-çarpanının, potansiyel engelinin şiddetine ve salınımların titreşim merkezine bağlı değişimi araştırılmıştır. Potansiyel engelinin şiddeti arttıkça elektronların etkin g-çarpanının arttığı ve salınımların denge noktasına bağlı olduğu görülmüştür. Anahtar kelimeler: Kane tipi yarıiletkenler, g-çarpan Effective g-factor of Electrons in the Kane Type Semiconductor which has Delta Type Potential Barrier Abstract: In this study, the effective g-factor of electrons has been calculated on Kane type semiconductors which have a delta-type potential barrier. Applied uniform magnetic field directed along the axis-z. The energy spectrum of the electrons has been investigated into the Kane model. The electron g-factor calculated as a function of the strength of potential barrier and the centre of magnetic oscillations. It has been seen that the effective g-value of electron increases with increasing Ω, also oscillations have been observed the dependence on the equilibrium position. Key words: Kane type semiconductors, g-factor

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Cite This Article

Babanlı, A., Altuğ, D. T. (2014). Delta Tipi Engel Potansiyeli Olan Kane Tipi Yarıiletkenlerde Elektronların Etkin g-Çarpanı. Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi, Volume: 9 Issue: 2. https://ajindex.com/articles/1278001

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