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Journals / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi / 2026 / Cilt: 6 Sayı: 3

The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal

Metal ve Yarıiletken Arasındaki Yalıtkan Tabakanın Elektriksel karakterizasyon Etkisi

İkram Orak
Adem Koçyiğit
Pages
57–67
Publication Date
2016-09-30
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

It was observed that from the C-V characterizations at 500 kHz dual, contact behaved similarly memristor structure.   

📌 3 Key Takeaways

🎯
Objective & Hypothesis:Metal-Insulator-semiconductor contacts (MIS) have been studied its importance in electronic and optoelectronic.
📊
Key Findings & Data:For this reason, Si 3 N 4 were deposited with PECVD technique on p-type Si about 5 nm thickness layers.
💡
Conclusion & Impact:It was observed that from the C-V characterizations at 500 kHz dual, contact behaved similarly memristor structure.   
🔬Design:Araştırma Makalesi
📍Scope:Comprehensive Sample
⚙️Variables:Al/Si 3N4/p-Si · kapasitör özelliği · metal-yalıtkan-yarıiletken yapılar

Abstract

Metal-Insulator-semiconductor contacts (MIS) have been studied its importance in electronic and optoelectronic. Their importance comes from its so high dielectric constant, storage layer property and effect of capacitance. For this reason, Si 3 N 4 were deposited with PECVD technique on p-type Si about 5 nm thickness layers. The thicknesses of Si 3 N 4 were measured with an elipsometre and obtained MIS contact with Al contact. It was researched the insulator layer effect on the Al/p-Si contact. Its electrical characterizations were inquired by use of the forward and reverse bias I-V , C–V and G-V measurements and were seen that the insulator Si 3 N 4 layer influenced characterizations of the contact. Effect of the interface states ( N ss ), the series resistance ( R s ) and the other some electrical parameters were investigated by calculating from I-V and C–V measurements. It was observed that from the C-V characterizations at 500 kHz dual, contact behaved similarly memristor structure.   

Özet

Metal-yalıtkan-yarıiletken (MIS) aygıtlar elektronik ve optoelektronikteki önemlerinden dolayı çalışılmaktadır. Bu önem aygıtların yüksek dielektrik sabitine, depolama tabakası ve kapasitans özelliklerine sahip olmalarından kaynaklanmaktadır. Bu yüzden Si 3 N 4 tabakası p-tipi Si üzerine PECVD tekniği kullanılarak büyütülmüş, kalınlığı elipsometre ile 5 nm olarak ölçülmüştür ve Al kontak sayesinde MIS yapısı elde edilmiştir. Elde edilen Al/p-Si yapısı üzerine Si 3 N 4 tabakasının etkisi araştırılmıştır. Bunun için aygıtın elektrik karakterizasyonları ileri ve ters beslem I-V , C–V ve G-V ölçümleriyle yapılmış ve yalıtkan Si 3 N 4 tabakanın diyot özelliklerini oldukça etkilediği görülmüştür. Ara yüzey halleri ( N ss ), seri direnç ( R s ) ve diğer bazı elektriksel parametrelerin aygıt üzerine etkileri I-V ve C–V ölçümlerinden hesaplanarak araştırılmıştır. C-V ölçümlerinden aygıtın memristör bir yapı gibi davrandığı tespit edilmiştir   

🔖

Cite This Article

Orak, İ., Koçyiğit, A. (2016). The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal. Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, Cilt: 6 Sayı: 3, 57–67. https://ajindex.com/articles/1273118

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