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Journals / Gazi University Journal of Science / 2026 / Volume: 18 Issue: 3

THERMOELECTRIC CHARACTERIZATION OF N-TYPE (Bi2Te3)Se3 SEMICONDUCTORS IN A TEMPERATURE RANGE 11-373 K

N-TİPİ (Bi2Te3)Se3 YARIİLETKEN KRİSTALLERİN 11-373 K SICAKLIK ARALIĞINDA TERMOELEKTRİK KARAKTERİZASYONU

Raşit Ahıska
Eyüp Güler
Selim Acar
Mehmet Kasap
Pages
—
Publication Date
2010-08-12
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

At the room temperature, the Z parameter has been calculated as 4.1x10 -3 K -1 and 2.4x10 -3 K -1 for the samples grown by the traveling heater methods, respectively.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:ABSTRACT The two n-type (Bi 2 Te 3 )Se 3 semiconductor samples were grown from Bi 2 Te 3 and Bi 2 Se 3 components using traveling heater and pulverized methods.
📊
Key Findings & Data:Thermoelectric properties such as electrical conductivity and Seebeck coefficient have been measured in a temperature range 11-373 K using Harman technique.
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Conclusion & Impact:At the room temperature, the Z parameter has been calculated as 4.1x10 -3 K -1 and 2.4x10 -3 K -1 for the samples grown by the traveling heater methods, respectively.
🔬Design:Article
📍Scope:Comprehensive Sample
⚙️Variables:Key Words: Traveling heater and heat pressing methods · Harman technique · thermoelectric properties

Abstract

ABSTRACT The two n-type (Bi 2 Te 3 )Se 3 semiconductor samples were grown from Bi 2 Te 3 and Bi 2 Se 3 components using traveling heater and pulverized methods. Thermoelectric properties such as electrical conductivity and Seebeck coefficient have been measured in a temperature range 11-373 K using Harman technique. At the room temperature, the Z parameter has been calculated as 4.1x10 -3 K -1 and 2.4x10 -3 K -1 for the samples grown by the traveling heater methods, respectively.

Özet

İki adet n-tipi (Bi2Te3)Se3 yarıiletkeni Bi2Te3 ve Bi2Se3 bileşimlerinden, bölge eritme ve presleme yöntemi ile büyütüldü. Bu yarıiletken numunelerin termoelektrik özellikleri; elektriksel iletkenlik ve Seebeck kat sayısı 11-373 K sıcaklık aralığında Harman tekniği kullanılarak ölçüldü. Oda sıcaklığında, Z parametresi bölge eritme yöntemi ile büyütülen numune için 4,1x10-3 K-1presleme yöntemi ile büyütülen yarıiletken numune için 2,4x10-3 K-1 olarak hesaplandı

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Cite This Article

Ahıska, R., Güler, E., Acar, S., Kasap, M. (2010). THERMOELECTRIC CHARACTERIZATION OF N-TYPE (Bi2Te3)Se3 SEMICONDUCTORS IN A TEMPERATURE RANGE 11-373 K. Gazi University Journal of Science, Volume: 18 Issue: 3. https://ajindex.com/articles/1270143

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