CALCULATION OF ELECTRONIC BAND STRUCTURE OF FERROELECTRIC SEMICONDUCTOR BISMUTH NIOBIUM OXYFLUORIDE (Bi2NbO5F) CRYSTAL

Abstract

In this study, the geometric structural optimization, electronic band structure and total density of states for electrons of ferroelectric Bi 2 NbO 5 F structure with space group Pca2 1 at room temperature have been investigated by Augmented Plane Wave method (APW) using the density functional theory (DFT) under the local density approximation (LDA). The ground state properties of ferroelectric Bi 2 NbO 5 F structure are studied. The computed ground state properties and experimental results are consistent. The energy band structure of Bi 2 NbO 5 F compound below T c shows that it is a ferroelectric semiconductor with narrow band gap of 0.0589 eV. Unfortunately, there is neither experimental nor theoretical electronic band structure study of Bi 2 NbO 5 F crystal in the literature, so we could not compare our results.