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Journals / Balıkesir Üniversitesi Fen Bilimleri Enstitüsü Dergisi / 2026 / Cilt: 8 Sayı: 1

1,3-Bis-(p-İminobenzoik Asit) İndan Langmuir-Blodgett (LB) Filmlerin Elektriksel Özellikleri

Hüseyin Sarı
Tayfun Uzunoğlu
Onur Turhan
Pages
46–53
Publication Date
2006-06-01
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

By analyzing I-V curves and assuming Schottky conduction mechanism the barrier height was found to be as 1.0 eV

📌 3 Key Takeaways

🎯
Objective & Hypothesis:Organic material 1,3-bis-(p-iminobenzoi acid) indane was grown on glass substrates by Langmuir-Blodgett film (LB) technique for the first time.
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Key Findings & Data:Quality of the transferred LB films was verified by measuring quartz crystal microbalance and UV-visible absorption spectra.
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Conclusion & Impact:By analyzing I-V curves and assuming Schottky conduction mechanism the barrier height was found to be as 1.0 eV
🔬Design:Makale
📍Scope:Comprehensive Sample
⚙️Variables:Langmuir-Blodgett (LB) ince film · 3-bis-(p-iminobenzoik asit) indan · kuartz kristal mikrobalans

Abstract

Organic material 1,3-bis-(p-iminobenzoi acid) indane was grown on glass substrates by Langmuir-Blodgett film (LB) technique for the first time. Quality of the transferred LB films was verified by measuring quartz crystal microbalance and UV-visible absorption spectra. Electrical properties of the different layered films were investigated by measuring room temperature I-V curves. By analyzing I-V curves and assuming Schottky conduction mechanism the barrier height was found to be as 1.0 eV

Özet

1,3-bis-(p-iminobenzoik asit) indan olarak bilinen organik molekül, katı yüzey üzerinde Langmuir-Blodgett (LB) film tekniği ile ilk kez büyütüldü. Filmlerin katı yüzey üzerine transferlerinin gerçekleştiğini doğrulamak için büyütme sırasında kuartz kristal mikrobalans yöntemi, büyütme sonrasında da UV-görünür soğurma spektrumlarından yararlanıldı. Filmlerin elektriksel özellikleri, metal/LB-film/metal şeklinde üretilen yapılarda oda sıcaklığındaki I-V ölçülerek incelendi. I-V eğrilerinin Schottky mekanizmasına uyduğu kabul edilerek LB film/metal engel yüksekliği 1,0 eV olarak hesaplandı

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Cite This Article

Sarı, H., Uzunoğlu, T., Turhan, O. (2006). 1,3-Bis-(p-İminobenzoik Asit) İndan Langmuir-Blodgett (LB) Filmlerin Elektriksel Özellikleri. Balıkesir Üniversitesi Fen Bilimleri Enstitüsü Dergisi, Cilt: 8 Sayı: 1, 46–53. https://ajindex.com/articles/1264030

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