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Üretilmiş memristörlerin iki farklı yöntem ile modellenmesi

Deriving models of fabricated memristors using two approaches

Mert Çolak, Itır Köymen

Sayfa
514–520
Yayın Tarihi
2026-06-05
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Özet

İki tür Titanyum Oksit tabanlı memristif aygıt üretilmiştir. Aygıtlardan biri akım sinyali ile, diğeri ise gerilimle uyarılarak karakterize edilmiştir. Bu aygıtların modelleme çalışması iki farklı modelleme yaklaşımı kullanılarak yapılmıştır. Yaklaşımların ilkinde MATLAB’da ölçüm verisine eğri uydurma tekniği kullanılarak özgün modeller elde edilmiştir. İkincisinde ise mevcut bir model olan Quasi-Static Memdiode Model (QMM) incelenmiş ve üretilmiş aygıtlara uyarlanmıştır. Bu sayede iki farklı giriş değişkeni için modeller elde edilmiştir. Modeller SPICE ve Verilog-A dillerinde geliştirilmiştir. Bunun amacı bu memristörleri SPICE ve Cadence Spectre platformlarında simüle edebilmek ve bu sayede hibrit memristör+ CMOS devreler tasarlayabilmektir. Modellerin gerçek davranışa sadakati gerçek ölçüm verisi ve modellerin davranışları kıyaslanarak doğrulanmıştır.

Abstract

Two distinct Titanium Oxide based memristive devices were fabricated. One device was electrically characterized with a driving current, the other with a driving voltage. Two approaches were utilized for modelling these devices: firstly, novel models of I-V behavior were developed using curve fitting in MATLAB. Secondly, an existing memristor model, Quasi-Static Memdiode Model (QMM) was investigated and modified to reflect the behavior of the fabricated memristive devices. Thus, models for both current driven and voltage driven devices were extracted. SPICE and Verilog-A coding languages were used to simulate the devices in SPICE and Cadence Spectre to enable the simulation and design of hybrid memristor+ CMOS circuits on these widely used platforms. The accuracy of the models was verified by comparing simulation results to measurement results.

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Bu Makaleye Atıf Yap

Çolak, M., Köymen, I. (2026). Üretilmiş memristörlerin iki farklı yöntem ile modellenmesi. Pamukkale Üniversitesi Mühendislik Bilimleri Dergisi, Cilt: 32 Sayı: 3, 514–520. https://doi.org/10.65206/pajes.33568

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