Dergiler / Mehmet Akif Ersoy Üniversitesi Fen Bilimleri Enstitüsü Dergisi / 2011 / Cilt: 2 - Sayı: 1 #80188
Alttaş sıcaklığının expanding thermal plazma yöntemi ile elde edilen a-Si:H filmlerin optik ve elektriksel özellikleri üzerine etkisi
- Sayfa
- 40–49
- DOI
- —
Özet
Optical properties and dark current activation energy of hydrogenated amorphous silicon (a,Si:H) produced by the expanding thermal plasma chemical vapour deposition (ETPCVD) technique are investigated as a function of substrate temperature in the 150,500°C temperature range. The optical transmission spectra were used to obtain the thickness, refractive index, and optical band gap of the a, Si:H films. It is observed that while the refractive index is increasing with substrate temperature, the optical band gap and deposition rate, as well as the dark conductivity activation energy, are decreasing.
Abstract
Optical properties and dark current activation energy of hydrogenated amorphous silicon (a,Si:H) produced by the expanding thermal plasma chemical vapour deposition (ETPCVD) technique are investigated as a function of substrate temperature in the 150,500°C temperature range. The optical transmission spectra were used to obtain the thickness, refractive index, and optical band gap of the a, Si:H films. It is observed that while the refractive index is increasing with substrate temperature, the optical band gap and deposition rate, as well as the dark conductivity activation energy, are decreasing.