Dergiler / Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji / 2017 / Cilt: 5 - Sayı: 3
Aynı Şartlarda Hazırlanmış Al/Bi3Ti4O12/n-Si (MFS) diyotların (60 Adet) Engel Yükseklikleri İle İdealite Faktörlerindeki Dağılım
- Sayfa
- 89–96
- DOI
- —
Özet
Bu çalışmada, aynı şartlarda hazırlanmış 60 adet Al/Bi3Ti4O12/n-Si (MFS) diyot için engel
Abstract
In this study, the values of barrier heights and ideality factors of identically fabricated Au/BTO/n-Si (MFS) type SBDs (60 dots) have been obtained from their intercepts and slopes linear parts offorward bias lnI vs V plots at room temperature. Experimental results show that these twoimportant parameters (BH and n) of the diodes change from diode to diode even if they areidentically prepared on same quarter n-Si wafer. These results are clearly important to understandthe physical origin of such non-ideal behavior so that it can be controlled in future such deviceapplications. High values of n can be attributed to the existence of a wide distribution of lowSchottky barrier height (SBH) patches, interfacial BTO layer and surface states. According to us,the BH differences over the contact area are a result of inhomogeneity interfacial layer thicknessor composition and BH between metal, grain boundaries and semiconductor and non-uniformityof the interfacial charges or dislocations.