Channel Length Modulation in a Polystyrene Insulated Organic Field Effect Transistor Using PEDOT: PSS Composite Electrode

Özet

Channel length-modulated Organic Field Effect Transistor (OFET) was fabricated on a prepatterned sourcedrain Indium Tin Oxide (ITO) substrate by spin coating method using a Poly (3-hexylthiophene-2,5-diyl) (P3HT) semiconductor and Polystyrene (PS) insulator. Poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate) (PEDOT:PSS) was used as the gate electrode. Thus, the structure of the OFET device was obtained as ITO/P3HT/PS/PEDOT:PSS. ITO/PS/PEDOT:PSS structure was prepared using the same method for measuring the capacitance of the polymer insulator. Output and transfer current-voltage (I-V) characteristics of the electrical characterization of the obtained OFET devices were obtained in full darkness and in the air environment. Basic parameters of OFET devices; voltage threshold (VTh), field effect mobility (FET) and the current on/off ratio (Ion/off) are exracted from the capacitance-frequency (C-f) graph of the ITO/PS/PEDOT:PSS structure. Produced PS-OFETs have been found to exhibit good device performance, such as low VTh, acceptable mobility and Ion/off values.