ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING

Abstract

To explain the behavior of Hall mobility versus temperature T behavior in In0.51Ga0.49As and In0.60Ga0.40As detailed calculations have been carried out based on Kubo formula by taking the dislocation scattering as the dominant scattering mechanism. A good agreement has been obtained between the theory and the experiment. Key Words: Hall mobility, dislocation scattering, Kubo formula